In PR removal process, the method of “space alternated phase shift (SAPS)” mega sonic was applied for the assistance of PR stripping. The mega sonic power could pass through the deep hole of patterns or other complicated patterns with sustained energy, facilitating the removal of photoresist completely. Moreover, the optical microscope was carried out to examine the results of PR removal effects in different pattern wafers and AOI was used to evaluate first pass yield (FPY). Mega sonic energy with different powers and different applied reaction time was rigorously investigated the removal effects of photoresist.

The wet chemistry post-etch clean is an essential step in dual damascene technology, in this work, two types of semi-aqueous wet clean chemicals (ST250 from ATMI and ICS8000 from Anji) are tested in ACM 300mm single clean tool. We keep addressing the ball-type defects by proposing one possible failure mechanism and presenting several solutions. The photo-assistant copper corrosion and potential chemical residue problem are also discussed.

Xtacking 3D NAND process normally combines two wafers together. Firstly, one of the wafers needs to be trimmed and cleaned before bonding (as shown in Fig.1). The trimming process cuts the wafer directly by mechanical forces in the region of 1-2 mm width from the wafer’s edge and 0.1-0.2 mm depth.

Integrated circuit(IC) design, IC manufacturing and IC packaging constitute the three pillars of IC industry. With the development of chip integration and high-density circuit packages, more photolithographic technology step were used in IC industry. As we all know, the purpose of photoresist stripping is to remove photoresist (PR) residues, particles and metal which come from the pattern structures. The photoresist (PR) stripping process is an important factor after photolithography technology which plays a key role in the yield of products. Residual photoresist can cause device layer failure or even damage the device layer. Conventional wet PR stripping, soaking and single chamber stripping is widely used for removal photoresist in advanced packaging. Wet PR stripping uses a specific chemical to dissolve the PR layer. During PR removal process, it will need 20~30min bench soaking method and 5~10min single chemical rinse to accomplish PR strip step which may lead to a low throughput. In this work, the method of “space alternated phase shift (SAPS)” mega sonic was applied for the assistance of PR stripping. The mega sonic power could pass through the deep hole of patterns or other complicated patterns with sustained energy, facilitating the removal of photoresist completely. Moreover, the optical microscope was carried out to examine the results of PR removal effects in different pattern wafers and AOI was used to evaluate first pass yield (FPY). Mega sonic energy with different powers and different applied reaction time was rigorously investigated the removal effects of photoresist.

The Timely Energized Bubble Oscillation(TEBO) mode provides stable cavitation with a wide power window. It is unlike conventional megasonic which creates transit cavitation and damage when the bubble implodes. The new megasonic technology can be used to clean “sensitive” structures at 28nm and below without any pattern damage.

SAPS megasonic technology coupled with functional water has a significant capability for fine particle removal in wafer cleaning, and the mechanism for this functioning is explained by radical generation.